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PDF or EPUB files for free or buy cheap. Download books in digital format ebooks on the Internet without charging. Search and download e-books on your computer.Over the past several decades, the semiconductor industry has undergone a revolution by the use of semiconductor technology to fabricate small, highly integrated electronic devices, and the most common semiconductor technology presently used is silicon-based. A large variety of semiconductor devices have been manufactured having various applications in numerous disciplines. One such silicon-based semiconductor device is a metal-oxide-semiconductor (MOS) transistor. The MOS transistor is used as a basic building block in a vast number of integrated circuits. It is generally an important factor in determining overall semiconductor performance that the semiconductor has a large number of active devices.
The basic structure of the MOS device includes a gate electrode over the semiconductor substrate, source and drain regions in the substrate on either side of the gate electrodes, and a channel region in the substrate between the source and drain regions. A gate dielectric layer is disposed over the gate electrode, and a gate electrode layer is disposed over the gate dielectric layer. An interlayer dielectric (ILD) is disposed over the gate electrode layer and the gate dielectric layer. Contact plugs are formed through the ILD to make electrical connection to the gate electrode and the source/drain regions.
As the semiconductor industry has progressed into nanometer technology process nodes in pursuit of higher device density, higher performance, and lower costs, challenges from both fabrication and design have resulted in the development of three-dimensional designs, such as fin-like field effect transistors (FinFETs). In a FinFET, a channel is formed extending on a sidewall and/or the top surface of a semiconductor fin, and a gate on the sidewall of the semiconductor fin. In some FinFET structures
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